The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 14, 2017

Filed:

Oct. 15, 2015
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Yogesh B. Wakchaure, Folsom, CA (US);

Aliasgar Madraswala, Folsom, CA (US);

Pranav Kalavade, San Jose, CA (US);

Xin Guo, San Jose, CA (US);

David Pelster, Longmont, CO (US);

Myron Loewen, Loveland, CO (US);

Feng Zhu, San Jose, CA (US);

Brennan A. Watt, Boulder, CO (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01); G11C 11/56 (2006.01); G11C 11/4096 (2006.01); G11C 16/22 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 7/10 (2013.01); G11C 11/4096 (2013.01); G11C 16/225 (2013.01);
Abstract

Methods, apparatus, systems and articles of manufacture to preserve data of a solid state drive during a power loss event are disclosed. An example method includes sending, upon detection of the power loss event, from a processor of the solid state drive, a command to abort an ongoing write operation of an aborted memory cell. In response to an indication that the ongoing write operation is aborted, the data to be written to the aborted memory cell is recovered. A first portion of the data to be written to the aborted memory cell is written to a first memory cell. A second portion of the data to be written to the aborted memory cell is written to a second memory cell.


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