The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Feb. 14, 2014
Applicant:

Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;

Inventors:

Ru-Shang Hsiao, Jhubei, TW;

Chia-Ming Chang, Tainan, TW;

Huang Jiun-Jie, Kaohsiung, TW;

Ling-Sung Wang, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1033 (2013.01); H01L 29/66666 (2013.01); H01L 29/7827 (2013.01); H01L 29/0847 (2013.01);
Abstract

Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a first channel region and a second channel region that are formed according to at least one of a vertical channel configuration or a dual channel configuration. The first channel region operates as a first channel between a source region and a drain region of the semiconductor arrangement. The second channel region operates as a second channel between the source region and the drain region. A gate region, formed between the first channel region and the second channel region, operates to control the first channel and the second channel. Performance of the semiconductor arrangement is improved, such as an increase in current, because two current paths between the source region and the drain region are provided by the two channels.


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