The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Nov. 18, 2013
Applicant:

United Microelectronics Corp., Hsinchu, TW;

Inventors:

Yung-Ju Wen, Taoyuan County, TW;

Chang-Tzu Wang, Taoyuan County, TW;

Tien-Hao Tang, Hsinchu, TW;

Kuan-Cheng Su, Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 27/092 (2006.01); H01L 27/02 (2006.01); H01L 27/088 (2006.01);
U.S. Cl.
CPC ...
H01L 27/092 (2013.01); H01L 27/0277 (2013.01); H01L 27/088 (2013.01);
Abstract

A semiconductor device is described, including a substrate including a first area and a second area, a first MOS element of a first conductivity type in the first area, and a second MOS element of the first conductivity type in the second area. The first area is closer to a pick-up region of the substrate than the second area. The substrate has a second conductivity type. The bottom depth of a first electrical conduction path in the substrate in the first area is smaller than that of a second electrical conduction path in the substrate in the second area.


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