The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Jun. 25, 2015
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Jin Cai, Cortlandt Manor, NY (US);

Tak H. Ning, Yorktown Heights, NY (US);

Jeng-Bang Yau, Yorktown Heights, NY (US);

Sufi Zafar, Briarcliff Manor, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/082 (2006.01); H01L 29/735 (2006.01); H01L 29/10 (2006.01); H01L 29/161 (2006.01); H01L 29/737 (2006.01); H01L 29/06 (2006.01); H01L 23/31 (2006.01); H01L 21/8222 (2006.01); G01T 1/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/082 (2013.01); G01T 1/026 (2013.01); H01L 21/8222 (2013.01); H01L 23/3171 (2013.01); H01L 29/0653 (2013.01); H01L 29/1008 (2013.01); H01L 29/161 (2013.01); H01L 29/6625 (2013.01); H01L 29/66242 (2013.01); H01L 29/735 (2013.01); H01L 29/737 (2013.01);
Abstract

An integrated sensor for detecting the presence of an environmental material and/or condition includes a sensing structure and first and second bipolar junction transistors (BJTs). The first BJT has a base that is electrically coupled with the sensing structure and is configured to generate an output signal indicative of a change in stored charge in the sensing structure. The second BJT is configured to amplify the output signal of the first bipolar junction transistor. The first and second BJTs and the sensing structure are monolithically formed a common substrate.


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