The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Jun. 23, 2015
Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Liu Chen, Munich, DE;

Toni Salminen, Munich, DE;

Stefan Mieslinger, Kottgeisering, DE;

Giuliano Angelo Babulano, Ottobrunn, DE;

Jens Oetjen, Ottenhofen, DE;

Markus Dinkel, Unterhaching, DE;

Franz Jost, Stuttgart, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/16 (2006.01); H01L 43/02 (2006.01); H01L 43/04 (2006.01); H01L 43/08 (2006.01); H01L 23/495 (2006.01); H01L 23/31 (2006.01); H01L 23/58 (2006.01); H01L 23/498 (2006.01); G01R 33/09 (2006.01); G01R 33/07 (2006.01);
U.S. Cl.
CPC ...
H01L 25/16 (2013.01); G01R 33/07 (2013.01); G01R 33/09 (2013.01); H01L 23/3107 (2013.01); H01L 23/49541 (2013.01); H01L 23/49575 (2013.01); H01L 23/49838 (2013.01); H01L 23/58 (2013.01); H01L 43/02 (2013.01); H01L 43/04 (2013.01); H01L 43/08 (2013.01);
Abstract

A power semiconductor package includes a substrate having a plurality of metal leads, a power semiconductor die attached to a first one of the leads and a magnetic field sensor integrated in the same power semiconductor package as the power semiconductor die and positioned in close proximity to a current pathway of the power semiconductor die. The magnetic field sensor is operable to generate a signal in response to a magnetic field produced by current flowing in the current pathway, the magnitude of the signal being proportional to the amount of current flowing in the current pathway.


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