The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 07, 2017

Filed:

Aug. 03, 2012
Applicant:

Takaharu Yamano, Nagano, JP;

Inventor:

Takaharu Yamano, Nagano, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 21/00 (2006.01); H01L 21/768 (2006.01); H01L 25/065 (2006.01); H01L 25/00 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01); H01L 23/498 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76898 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/06 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 24/16 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/05024 (2013.01); H01L 2224/0557 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05571 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/06182 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/13021 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13083 (2013.01); H01L 2224/13084 (2013.01); H01L 2224/13111 (2013.01); H01L 2224/13144 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/13155 (2013.01); H01L 2224/13164 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/16237 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73104 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81193 (2013.01); H01L 2225/06513 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06544 (2013.01); H01L 2924/00011 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate, which includes a through hole that extends through the semiconductor substrate. An insulative layer includes a first surface, an opposite second surface covering the semiconductor substrate, and an opening aligned with the through hole. An insulative film covers an inner wall surface of the semiconductor substrate and the opening. A through electrode is formed in the through hole and the opening inward from the insulative film. The through electrode includes a first end surface that forms a pad exposed from the first surface of the insulative layer. The first end surface of the through electrode is flush with the first surface of the insulative layer.


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