The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 07, 2017
Filed:
Apr. 20, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Yen-Hung Chen, Kaohsiung, TW;
Chin-Lung Lin, Hsinchu, TW;
Kuan-Wen Fang, Tainan, TW;
Po-Ching Su, Tainan, TW;
Hung-Wei Lin, Tainan, TW;
Sheng-Lung Teng, Tainan, TW;
Lun-Wen Yeh, Hualien County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
An optical proximity correction (OPC) process is provided. The method comprising receiving a first pattern corresponding to a first structure of a semiconductor structure, and a second pattern corresponding to a second structure of said semiconductor structure. Next, a first OPC process is performed for the first pattern to obtain a revised first pattern, wherein the revised first pattern has a first shift regarding to the first pattern. A second OPC process is performed for the second pattern to obtain a revised second pattern, wherein the second OPC process comprises moving the second pattern according to the first shift.