The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Jul. 06, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Chun Hsiung Tsai, Xinpu Township, TW;
Yan-Ting Lin, Baoshan Township, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The embodiments described above provide mechanisms of forming contact structures with low resistance. A strained material stack with multiple sub-layers is used to lower the Schottky barrier height (SBH) of the conductive layers underneath the contact structures. The strained material stack includes a SiGe main layer, a graded SiG layer, a GeB layer, a Ge layer, and a SiGe top layer. The GeB layer moves the Schottky barrier to an interface between GeB and a metal germanide, which greatly reduces the Schottky barrier height (SBH). The lower SBH, the Ge in the SiGe top layer forms metal germanide and high B concentration in the GeB layer help to reduce the resistance of the conductive layers underneath the contact structures.