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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9559091 B1

PDFFull Text
Date of Patent:
Jan. 31, 2017

Filed:

Jun. 21, 2015

Method of manufacturing fin diode structure

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Chang-Tzu Wang, Taoyuan, TW;

Ping-Chen Chang, Pingtung County, TW;

Tien-Hao Tang, Hsinchu, TW;

Kuan-Cheng Su, Taipei, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Cuong Q Nguyen

Assistant Examiner:

Nishath Yasmeen

Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 27/02 (2006.01); H01L 29/861 (2006.01); H01L 21/76 (2006.01); H01L 29/78 (2006.01); H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 21/22 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 21/22 (2013.01); H01L 21/265 (2013.01); H01L 21/30604 (2013.01); H01L 21/76 (2013.01); H01L 27/0629 (2013.01); H01L 29/0642 (2013.01); H01L 29/0649 (2013.01); H01L 29/0657 (2013.01); H01L 29/0692 (2013.01); H01L 29/6609 (2013.01); H01L 29/66136 (2013.01); H01L 29/785 (2013.01); H01L 29/861 (2013.01); H01L 29/1606 (2013.01); H01L 29/2003 (2013.01);
Abstract

A method of manufacturing a fin diode structure includes providing a substrate, forming a doped well in said substrate, forming at least one doped region of first conductivity type or at least one doped region of second doped type in said doped well, performing an etching process to said doped region of first conductivity type or said doped region of second conductivity type to form a plurality of fins on said doped region of first conductivity type or on said doped region of second conductivity type, forming shallow trench isolations between said fins, and performing a doping process to said fins to form fins of first conductivity type and fins of second conductivity type.

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