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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9559020 B1

PDFFull Text
Date of Patent:
Jan. 31, 2017

Filed:

Dec. 09, 2015

Method for postdoping a semiconductor wafer

Applicant:

Infineon Technologies Ag, Neubiberg, DE;

Inventors:

Reinhard Ploss, Unterhaching, DE;

Helmut Oefner, Zorneding, DE;

Hans-Joachim Schulze, Taufkirchen, DE;

Assignee:

Infineon Technologies AG, Neubiberg, DE;

Attorney:

Eschweiler & Associates, LLC

Primary Examiner:

Michael Lebentritt

Int. Cl.
CPC ...
H01L 29/12 (2006.01); H01L 21/66 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/261 (2006.01); H01L 21/263 (2006.01); H01L 29/36 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/32 (2006.01); H01L 29/739 (2006.01); H01L 29/74 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 22/20 (2013.01); H01L 21/261 (2013.01); H01L 21/263 (2013.01); H01L 21/265 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 22/14 (2013.01); H01L 29/36 (2013.01); H01L 22/12 (2013.01); H01L 29/32 (2013.01); H01L 29/66325 (2013.01); H01L 29/66348 (2013.01); H01L 29/66734 (2013.01); H01L 29/7397 (2013.01); H01L 29/74 (2013.01); H01L 29/7813 (2013.01); H01L 29/8611 (2013.01); H01L 29/872 (2013.01);
Abstract

A method for treating a semiconductor wafer having a basic doping is disclosed. The method includes determining a doping concentration of the basic doping, and adapting the basic doping of the semiconductor wafer by postdoping. The postdoping includes at least one of the following methods: a proton implantation and a subsequent thermal process for producing hydrogen induced donors. In this case, at least one of the following parameters is dependent on the determined doping concentration of the basic doping: an implantation dose of the proton implantation, and a temperature of the thermal process.

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