The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Jan. 15, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventor:
Katsuhiko Komori, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/3205 (2006.01); H01L 21/3213 (2006.01); H01L 21/3215 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02532 (2013.01); H01L 21/0243 (2013.01); H01L 21/0245 (2013.01); H01L 21/02494 (2013.01); H01L 21/02658 (2013.01); H01L 21/28525 (2013.01); H01L 21/32055 (2013.01); H01L 21/32135 (2013.01); H01L 21/32155 (2013.01); H01L 21/76877 (2013.01);
Abstract
A method of forming a silicon film in grooves formed on a surface of an object to be processed, the method including forming a first silicon film containing impurities so as to embed the first silicon film in the grooves of the object to be processed; doping the impurities in the vicinity of the surface of the first silicon film; expanding opening portions of the grooves by etching the first silicon film thereby forming expanded openings having grooves; and forming a second silicon film so as to embed the second silicon film in the grooves of the expanded openings is provided.