The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 31, 2017

Filed:

Jun. 01, 2015
Applicant:

Shin-etsu Chemical Co., Ltd., Tokyo, JP;

Inventors:

Katsuya Takemura, Jyoetsu, JP;

Masashi Iio, Jyoetsu, JP;

Hiroyuki Urano, Jyoetsu, JP;

Takashi Miyazaki, Jyoetsu, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/039 (2006.01); G03F 7/075 (2006.01); G03F 7/09 (2006.01); G03F 7/11 (2006.01); G03F 7/20 (2006.01); G03F 7/30 (2006.01); G03F 7/32 (2006.01); G03F 7/40 (2006.01); G03F 7/022 (2006.01); G03F 7/16 (2006.01); G03F 7/023 (2006.01);
U.S. Cl.
CPC ...
G03F 7/039 (2013.01); G03F 7/022 (2013.01); G03F 7/0226 (2013.01); G03F 7/0236 (2013.01); G03F 7/0757 (2013.01); G03F 7/09 (2013.01); G03F 7/11 (2013.01); G03F 7/16 (2013.01); G03F 7/20 (2013.01); G03F 7/30 (2013.01); G03F 7/32 (2013.01); G03F 7/40 (2013.01);
Abstract

A positive photosensitive resin composition containing a polymer compound obtained in the presence of an acid catalyst by condensation of at least a siloxane compound shown by formula (1), a phenol compounds shown by formula (2) and/or formula (3), and aldehydes and ketones shown by formula (4), a photosensitive material capable of generating an acid by light and increasing a dissolution rate in an aqueous alkaline solution, a crosslinker, and a solvent. There can be provided a positive photosensitive resin composition that can remedy the problem of delamination generated on metal wiring, electrode, and substrate such as Cu and Al, especially on substrate SiN, and can form fine pattern having forward tapered shape without generating scum and footing profile in the pattern bottom and on the substrate when the widely used 2.38% TMAH aqueous solution is used as a developer.


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