The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 31, 2017
Filed:
Oct. 09, 2013
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Noboru Takamure, Kawasaki, JP;
Tatsuhiro Okabe, Sagamihara, JP;
Assignee:
ASM IP Holding B.V, Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/44 (2006.01); C23C 16/40 (2006.01); C23C 16/34 (2006.01); C23C 16/36 (2006.01); C23C 16/30 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
C23C 16/405 (2013.01); C23C 16/308 (2013.01); C23C 16/34 (2013.01); C23C 16/36 (2013.01); C23C 16/4554 (2013.01); C23C 16/45553 (2013.01); C23C 16/52 (2013.01);
Abstract
A method for forming a Ti-containing film on a substrate by plasma-enhanced atomic layer deposition (PEALD) using tetrakis(dimethylamino)titanium (TDMAT) or tetrakis(diethylamino)titanium (TDEAT), includes: introducing TDMAT and/or TDEAT in a pulse to a reaction space where a substrate is placed; continuously introducing a NH-free reactant gas to the reaction space; applying RF power in a pulse to the reaction space wherein the pulse of TDMAT and/or TDEAT and the pulse of RF power do not overlap; and repeating the above steps to deposit a Ti-containing film on the substrate.
Published as:
US2015099072A1; KR20150041755A; JP2015074831A; TW201527579A; US9556516B2; TWI625414B; JP6472203B2; KR102332870B1;