The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Nov. 02, 2015
Applicant:
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Jia-Rui Lee, Kaohsiung, TW;
Kuo-Ming Wu, Hsinchu, TW;
Yi-Chun Lin, Hsinchu, TW;
Alexander Kalnitsky, San Francisco, CA (US);
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 21/8234 (2006.01); H01L 21/762 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/76224 (2013.01); H01L 21/823412 (2013.01); H01L 21/823425 (2013.01); H01L 21/823481 (2013.01); H01L 21/823493 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01);
Abstract
In some embodiments, a semiconductor device includes a first transistor and a second transistor. The first transistor includes a first source region in a first bulk region having a first concentration, and a first gate. The second transistor includes a second source region in a second bulk region having a second concentration higher than the first concentration. The second source region is connected with the first source region and the first gate.