The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 24, 2017

Filed:

Oct. 23, 2014
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Mukta G. Farooq, Hopewell Junction, NY (US);

John A. Fitzsimmons, Poughkeepsie, NY (US);

Erdem Kaltalioglu, Newburgh, NY (US);

Wei Lin, Albany, NY (US);

Spyridon Skordas, Wappingers Falls, NY (US);

Kevin R. Winstel, East Greenbush, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/288 (2006.01); H01L 21/302 (2006.01); H01L 21/66 (2006.01); H01L 21/768 (2006.01); H01L 25/00 (2006.01); H01L 25/065 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/2885 (2013.01); H01L 21/302 (2013.01); H01L 21/76898 (2013.01); H01L 22/34 (2013.01); H01L 25/0657 (2013.01); H01L 25/50 (2013.01); H01L 23/481 (2013.01); H01L 2225/06541 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Strain detection structures used with bonded wafers and chips and methods of manufacture are disclosed. The method includes forming lower metal wiring structures associated with a lower wafer structure. The method further includes bonding the lower wafer structure to an upper wafer structure and thinning the upper wafer, and forming upper metal wiring structures. The method further includes electrically linking the lower metal wiring structures to the upper metal wiring structures by formation of through silicon via structures to form an electrically connected chain extending between multiple wafer structures. The method further includes forming contacts to an outside environment which electrically contact two of the lower metal wiring structures.


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