The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
May. 31, 2013
Asm Ip Holding B.v., AP Almere, NL;
Werner Knaepen, Leuven, BE;
Bert Jongbloed, Oud-Heverlee, BE;
Dieter Pierreux, Dilbeek, BE;
Peter Zagwijn, LX Nijkerk, NL;
Hessel Sprey, Kessel-Lo, BE;
Cornelius A. van der Jeugd, Heverlee, BE;
Marinus Josephus de Blank, Heverlee, BE;
Robin Roelofs, Leuven, BE;
Qi Xie, Leuven, BE;
Jan Willem Maes, Wilrijk, BE;
ASM IP HOLDING B.V., , NL;
Abstract
A process for depositing aluminum nitride is disclosed. The process comprises providing a plurality of semiconductor substrates in a batch process chamber and depositing an aluminum nitride layer on the substrates by performing a plurality of deposition cycles without exposing the substrates to plasma during the deposition cycles. Each deposition cycle comprises flowing an aluminum precursor pulse into the batch process chamber, removing the aluminum precursor from the batch process chamber, and removing the nitrogen precursor from the batch process chamber after flowing the nitrogen precursor and before flowing another pulse of the aluminum precursor. The process chamber may be a hot wall process chamber and the deposition may occur at a deposition pressure of less than 1 Torr.