The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 24, 2017
Filed:
Oct. 13, 2014
Applicant:
Hermes-epitek Corporation, Taipei, TW;
Inventors:
Chung-Yuan Wu, Hsinchu, TW;
Robert Champetier, Hsinchu, TW;
Chung-Hua Fu, Hsinchu, TW;
Bu-Chin Chung, Hsinchu, TW;
Assignee:
Hermes-Epitek Corporation, Taipei, TW;
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01B 11/16 (2006.01); G02B 27/30 (2006.01); G01B 11/24 (2006.01);
U.S. Cl.
CPC ...
G01B 11/16 (2013.01); G01B 11/24 (2013.01); G02B 27/30 (2013.01);
Abstract
Apparatus and method for curvature and thin film stress measurement are disclosed. The apparatus comprises two light sources and a detector. Two light beams from the two light sources with an angle are not parallel. The two light beams are collimated and projected onto a specimen with a pitch. The detector receives the light beams reflected from the specimen. The curvature of the specimen is calculated via a distance between spots of the light beams on the detector or a size variation of one of the spots.