The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Feb. 05, 2016
Ngk Insulators, Ltd., Nagoya, JP;
Morimichi Watanabe, Nagoya, JP;
Jun Yoshikawa, Nagoya, JP;
Tsutomu Nanataki, Nagoya, JP;
Katsuhiro Imai, Nagoya, JP;
Tomohiko Sugiyama, Nagoya, JP;
Takashi Yoshino, Nagoya, JP;
Yukihisa Takeuchi, Nagoya, JP;
Kei Sato, Nagoya, JP;
NGK Insulators, Ltd., Nagoya-Shi, JP;
Abstract
Provided is a self-supporting gallium nitride substrate useful as an alternative material for a gallium nitride single crystal substrate, which is inexpensive and also suitable for having a large area. This substrate is composed of a plate composed of gallium nitride-based single crystal grains, wherein the plate has a single crystal structure in the approximately normal direction. This substrate can be manufactured by a method comprising providing an oriented polycrystalline sintered body; forming a seed crystal layer composed of gallium nitride on the sintered body so that the seed crystal layer has crystal orientation mostly in conformity with the crystal orientation of the sintered body; forming a layer with a thickness of 20 μm or greater composed of gallium nitride-based crystals on the seed crystal layer so that the layer has crystal orientation mostly in conformity with crystal orientation of the seed crystal layer; and removing the sintered body.