The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Mar. 16, 2016
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yu Chao Lin, Hsin-Chu, TW;
Ming-Ching Chang, Hsin-Chu, TW;
I-Yin Lu, Kaohsiung, TW;
Jih-Jse Lin, Sijhih, TW;
Chao-Cheng Chen, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
Semiconductor devices and methods of manufacture are disclosed. A representative transistor device includes two fins over a workpiece. An insulating material is over the fins. The insulating material is not disposed between the fins. A dielectric material is over sidewalls of the insulating material and over a portion of the workpiece between the fins. A gate is over the dielectric material. The gate includes a first conductive material and a second conductive material over the first conductive material. The second conductive material is recessed below a top surface of the insulating material. The second conductive material has a top surface with a rounded profile.