The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Jun. 04, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Chun-Chi Huang, Tainan, TW;
Yung-Hung Yen, Tainan, TW;
Hsin-Hsing Chen, Ping-Tung County, TW;
Chih-Yueh Li, Taipei, TW;
Tsun-Min Cheng, Changhua County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A semiconductor device includes an opening, a metal nitride layer, a bilayer metal layer and a conductive bulk layer. The opening is disposed in a first dielectric layer. The metal nitride layer is disposed in the opening. The bilayer metal layer is disposed on the metal nitride layer in the opening, where the bilayer metal layer includes a first metal layer and a second metal layer which is disposed on the first metal layer and has a greater metal concentration than that of the first metal layer. The conductive bulk layer is filled in the opening.