The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2017
Filed:
Jul. 26, 2015
United Microelectronics Corp., Hsin-Chu, TW;
Yu-Te Chen, Tainan, TW;
Chia-Hsun Tseng, Tainan, TW;
En-Chiuan Liou, Tainan, TW;
Chiung-Lin Hsu, Tainan, TW;
Meng-Lin Tsai, Tainan, TW;
Jan-Fu Yang, Tainan, TW;
Yu-Ting Hung, Hsinchu, TW;
Shin-Feng Su, Tainan, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A method of adjusting channel widths of semiconductive devices includes providing a substrate divided into a first region and a second region, wherein the substrate comprises numerous fins. A first implantation process is performed on the fins within the first region. Then, a second implantation process is performed on the fins within the second region, wherein the first implantation process and the second implantation process are different from each other in at least one of the conditions comprising dopant species, dopant dosage or implantation energy. After that, part of the fins within the first region and the second region are removed simultaneously to form a plurality of first recesses within the first region and a plurality of second recesses within the second region. Finally, a first epitaxial layer and a second epitaxial layer are formed to fill up each first recess and each second recess, respectively.