The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Jun. 03, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Ying Zhang, Santa Clara, CA (US);

Uday Mitra, Cupertino, CA (US);

Praburam Gopalraja, San Jose, CA (US);

Srinivas D. Nemani, Sunnyvale, CA (US);

Hua Chung, San Jose, CA (US);

Assignee:

APPLIED MATERIALS, INC., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 23/544 (2006.01); H01L 21/302 (2006.01); H01L 21/461 (2006.01); H01L 21/033 (2006.01); H01L 21/768 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); H01L 21/0337 (2013.01); H01L 21/31116 (2013.01); H01L 21/31144 (2013.01); H01L 21/76816 (2013.01);
Abstract

The present disclosure provides forming nanostructures with precision dimension control and minimum lithographic related errors for features with dimension under 14 nanometers and beyond. A self-aligned multiple spacer patterning (SAMSP) process is provided herein and the process utilizes minimum lithographic exposure process, but rather multiple deposition/etching process to incrementally reduce feature sizes formed in the mask along the manufacturing process, until a desired extreme small dimension nanostructures are formed in a mask layer.


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