The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Dec. 29, 2014
Applicant:

Synopsys, Inc., Mountain View, CA (US);

Inventors:

Victor Moroz, Saratoga, CA (US);

Xi-Wei Lin, Fremont, CA (US);

Assignee:

Synopsys, Inc., Mountain View, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5068 (2013.01); H01L 21/3086 (2013.01);
Abstract

An integrated circuit device having a plurality of lines is described in which the widths of the lines, and the spacing between adjacent lines, vary within a small range which is independent of variations due to photolithographic processes, or other patterning processes, involved in manufacturing the device. A sequential sidewall spacer formation process is described for forming an etch mask for the lines, which results in first and second sets of sidewall spacers arranged in an alternating fashion. As a result of this sequential sidewall spacer process, the variation in the widths of the lines across the plurality of lines, and the spacing between adjacent lines, depends on the variations in the dimensions of the sidewall spacers. These variations are independent of, and can be controlled over a distribution much less than, the variation in the size of the intermediate mask element caused by the patterning process.


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