The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 17, 2017

Filed:

Mar. 14, 2013
Applicant:

Dino Technology Acquisition Llc, Milpitas, CA (US);

Inventors:

Daniel Ping Peng, Fremont, CA (US);

Masaki Satake, San Jose, CA (US);

Changqing Hu, Sunnyvale, CA (US);

Assignee:

KLA-Tencor Corporation, Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/24 (2012.01); G03F 1/72 (2012.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/72 (2013.01); G03F 1/24 (2013.01); G03F 7/705 (2013.01);
Abstract

A technique for determining a set of surface profiles in a multilayer stack during a fabrication process may be determined using a model of this fabrication process, a geometry of the multilayer stack (such as a pre-defined geometry of the multilayer stack) and a surface profile in the multilayer stack (such as a measured surface profile of the top surface or a bottom surface of the multilayer stack). For example, the model of the fabrication process may be based on a generalized Eikonal equation. In conjunction with deposition rates and/or physical properties of the layers in the multilayer stack, deposition or growth of the multilayer stack may be simulated. Based on the determined set of surface profiles, an acceptance condition of the multilayer stack (such as a multilayer stack in a photo-mask for use in extreme ultra-violet photolithography) may be determined and/or a remedial action may be recommended.


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