The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Jan. 30, 2015
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Chin-I Liao, Tainan, TW;
Shih-Chieh Chang, Taipei, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
Some embodiments of the present disclosure provide a semiconductor device. The semiconductor device includes a semiconductive substrate; a gate structure over a fin structure of the semiconductive substrate; a channel portion of the fin structure under the gate structure; and at least one epitaxy region disposed over the semiconductive substrate and in contact with the channel portion. The epitaxy region includes a substance with a first lattice constant larger than a second lattice constant of the semiconductive substrate; and a concentration profile of the substance in the epitaxy region being decreasing from near a bottom portion to near a top portion. The bottom portion is closer to the channel portion than the top portion.