logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9543408 B1

PDFFull Text
Date of Patent:
Jan. 10, 2017

Filed:

Aug. 26, 2015

Method of forming patterned hard mask layer

Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Yi-Hui Lin, Changhua County, TW;

Keng-Jen Lin, Kaohsiung, TW;

Chun-Yao Yang, Kaohsiung, TW;

Yu-Ren Wang, Tainan, TW;

Assignee:

UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;

Attorneys:

Winston Hsu

Scott Margo

Primary Examiner:

Zandra Smith

Assistant Examiner:

Evan Clinton

Int. Cl.
CPC ...
H01L 21/3205 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/3213 (2006.01); H01L 21/3215 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/02532 (2013.01); H01L 21/02592 (2013.01); H01L 21/26513 (2013.01); H01L 21/324 (2013.01); H01L 21/32055 (2013.01); H01L 21/32139 (2013.01); H01L 21/32155 (2013.01); H01L 29/66795 (2013.01);
Abstract

A method of forming a patterned hark mask layer includes the following steps. A semiconductor substrate is provided. An amorphous silicon layer is formed on the semiconductor substrate. An implantation process is performed on the amorphous silicon layer. An annealing treatment is performed on the amorphous silicon layer after the implantation process. A patterned hard mask layer is formed on the amorphous silicon layer after the annealing treatment.

Find Patent Forward Citations

Lin, Yi-Hui. (2017). Method of forming patterned hard mask layer (U.S. Patent No. 9543408). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9543408

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…