The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Nov. 29, 2013
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Volume Chien, Tainan, TW;

Yun-Wei Cheng, Taipei, TW;

Shiu-Ko Jangjian, Tainan, TW;

Zhe-Ju Liu, Pingzhen, TW;

Kuo-Cheng Lee, Tainan, TW;

Chi-Cherng Jeng, Tainan, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 31/0232 (2014.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 27/14623 (2013.01); H01L 27/14621 (2013.01); H01L 27/14625 (2013.01); H01L 27/14629 (2013.01); H01L 27/14685 (2013.01); H01L 31/0232 (2013.01); H01L 31/02164 (2013.01); H01L 27/14627 (2013.01);
Abstract

Embodiments of mechanisms for forming an image sensor device are provided. The image sensor device includes a semiconductor substrate and a photodetector in the semiconductor substrate. The image sensor device also includes a dielectric layer over the semiconductor substrate, and the dielectric layer has a recess aligned with the photodetector. The image sensor device further includes a filter in the recess of the dielectric layer. In addition, the image sensor device includes a shielding layer between the dielectric layer and the semiconductor substrate and surrounding the filter.


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