The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Feb. 18, 2015
Applicant:
Stmicroelectronics (Rousset) Sas, Rousset, FR;
Inventors:
Marc Mantelli, Fuveau, FR;
Stephan Niel, Greasque, FR;
Arnaud Regnier, Les Taillades, FR;
Francesco La Rosa, Rousset, FR;
Julien Delalleau, Aix-en-Provence, FR;
Assignee:
STMICROELECTRONICS (ROUSSET) SAS, Rousset, FR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/115 (2006.01); H01L 29/423 (2006.01); H01L 29/788 (2006.01); G11C 16/14 (2006.01); H01L 21/28 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 21/266 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); G11C 16/14 (2013.01); H01L 21/266 (2013.01); H01L 21/28273 (2013.01); H01L 21/308 (2013.01); H01L 21/30604 (2013.01); H01L 21/32133 (2013.01); H01L 29/42328 (2013.01); H01L 29/42336 (2013.01); H01L 29/788 (2013.01);
Abstract
Various embodiments provide a memory cell that includes a vertical selection gate, a floating gate extending above the substrate, wherein the floating gate also extends above a portion of the vertical selection gate, over a non-zero overlap distance, the memory cell comprising a doped region implanted at the intersection of a vertical channel region extending opposite the selection gate and a horizontal channel region extending opposite the floating gate.