The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Sep. 09, 2015
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;

Inventors:

Chen-Yu Liu, Kaohsiung, TW;

Ching-Yu Chang, Yuansun Village, TW;

Chien-Chih Chen, Hsin-Chu, TW;

Yen-Hao Chen, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/004 (2006.01); H01L 21/027 (2006.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); C08F 220/22 (2006.01); G03F 7/42 (2006.01); G03F 7/40 (2006.01); G03F 7/11 (2006.01); C08F 220/18 (2006.01); C11D 11/00 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0276 (2013.01); C08F 220/18 (2013.01); C08F 220/22 (2013.01); C11D 11/0047 (2013.01); G03F 7/11 (2013.01); G03F 7/40 (2013.01); G03F 7/425 (2013.01); H01L 21/02118 (2013.01); H01L 21/3081 (2013.01); H01L 21/3086 (2013.01); H01L 21/31133 (2013.01);
Abstract

A system and method for anti-reflective layers is provided. In an embodiment the anti-reflective layer comprises a floating additive in order to form a floating additive region along a top surface of the anti-reflective layer after the anti-reflective layer has dispersed. The floating additive may comprise an additive group which will decompose along with a fluorine unit bonded to the additive group which will decompose. Additionally, adhesion between the middle layer and the photoresist may be increased by applying an adhesion promotion layer using either a deposition process or phase separation, or a cross-linking may be performed between the middle layer and the photoresist.


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