The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

Aug. 20, 2013
Applicants:

Carl Zeiss Laser Optics Gmbh, Oberkochen, DE;

Carl Zeiss Smt Gmbh, Oberkochen, DE;

Inventors:

Holger Kierey, Aalen, DE;

Heiko Siekmann, Aalen, DE;

Andre Bresan, Aalen, DE;

Assignee:

Carl Zeiss SMT GmbH, Oberkochen, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G02B 5/08 (2006.01); G02B 5/20 (2006.01); G02B 13/14 (2006.01); F21V 9/04 (2006.01); F21V 9/06 (2006.01); B24B 13/00 (2006.01); G02B 1/10 (2015.01); G02B 5/10 (2006.01); G02B 5/18 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G02B 5/208 (2013.01); B24B 13/00 (2013.01); G02B 1/10 (2013.01); G02B 5/0891 (2013.01); G02B 5/10 (2013.01); G02B 5/1838 (2013.01); G02B 5/1852 (2013.01); G02B 5/1857 (2013.01); G03F 7/70316 (2013.01); G21K 2201/064 (2013.01); G21K 2201/065 (2013.01); G21K 2201/067 (2013.01);
Abstract

A method for producing a reflective optical component for an EUV projection exposure apparatus, the component having a substrate having a base body, and a reflective layer arranged on the substrate, wherein the substrate has an optically operative microstructuring, comprises the following steps: working the microstructuring into the substrate, polishing the substrate after the microstructuring has been worked into the substrate, applying the reflective layer to the substrate. A reflective optical component for an EUV projection exposure apparatus correspondingly has a polished surface between the microstructuring and the reflective layer.


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