The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 10, 2017

Filed:

May. 22, 2015
Applicant:

Globalwafers Japan Co., Ltd., Niigata, JP;

Inventors:

Satoko Nakagawa, Tokyo, JP;

Kazuhiko Kashima, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/66 (2006.01); G01N 21/64 (2006.01); C30B 29/06 (2006.01); G01J 3/44 (2006.01); H01J 37/317 (2006.01); H01L 21/265 (2006.01); G01N 21/95 (2006.01); G01J 3/28 (2006.01); G01N 21/27 (2006.01);
U.S. Cl.
CPC ...
G01J 3/4406 (2013.01); G01N 21/6489 (2013.01); G01N 21/9501 (2013.01); H01J 37/3171 (2013.01); H01L 21/265 (2013.01); H01L 22/10 (2013.01); G01J 2003/2873 (2013.01); G01N 21/274 (2013.01);
Abstract

According to an embodiment, a method of forming a calibration curve is provided. The method includes ion-implanting different doses of an impurity into a plurality of first samples, measuring an intensity of photoluminescence deriving from the impurity by a photoluminescence spectroscopy for the first samples and a second sample made of the same semiconductor. Based on the amount of implanted impurity, the intensity of the photoluminescence, and a concentration of the impurity contained in the second sample measured by a method other than the photoluminescence spectroscopy, a calibration curve is formed.


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