The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 10, 2017
Filed:
Dec. 10, 2014
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Kazuya Takahashi, Nirasaki, JP;
Yoshikazu Furusawa, Nirasaki, JP;
Mitsuhiro Okada, Nirasaki, JP;
Hiromasa Yonekura, Nirasaki, JP;
Assignee:
TOKYO ELECTRON LIMITED, Tokyo, JP;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/322 (2006.01); C30B 5/00 (2006.01); C30B 1/02 (2006.01); C30B 29/54 (2006.01); C30B 29/06 (2006.01);
U.S. Cl.
CPC ...
C30B 1/023 (2013.01); C30B 29/06 (2013.01); C30B 29/54 (2013.01); Y10T 117/10 (2015.01);
Abstract
There is provided a method of crystallizing amorphous silicones, which includes: forming a stacked structure of a second amorphous silicon film followed by a first amorphous silicon film on an underlay film, the second amorphous silicon film having a faster crystal growth rate than the first amorphous silicon film; and performing a crystallization treatment on the stacked structure to crystallize silicones contained in at least the second amorphous silicon film.