The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Jul. 28, 2015
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Yuan-Sheng Huang, Taichung, TW;
Chao-Cheng Chen, Hsin-Chu, TW;
Chun-Hung Lee, Hsin-Chu, TW;
Hua Feng Chen, Hsin-Chu, TW;
Po-Hsueh Li, Taichung, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
An embodiment device includes a gate stack extending over a semiconductor substrate, a hard mask disposed on a top surface of the gate stack, and a low-k dielectric spacer on a side of the gate stack. A top of the low-k dielectric spacer is lower than an upper surface of the hard mask. The device further includes a contact electrically connected to a source/drain region adjacent the gate stack. The contact extends laterally over the low-k dielectric spacer, and a dielectric material is disposed between the contact and the low-k dielectric spacer. The dielectric material has a higher selectivity to etching than the low-k dielectric spacer.