The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Oct. 21, 2014
Applicant:
Macronix International Co., Ltd., Hsin-chu, TW;
Inventors:
Assignee:
Macronix International Co., Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/70 (2006.01); H01L 29/788 (2006.01); H01L 23/48 (2006.01); H01L 27/115 (2006.01); H01L 21/764 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11521 (2013.01); H01L 21/764 (2013.01); H01L 21/7682 (2013.01); H01L 27/11524 (2013.01); H01L 27/11568 (2013.01);
Abstract
A process for fabricating a gate structure, the gate structure having a plurality of gates defined by a network of spaces. The word line (WL) spaces within a dense WL region having airgaps and those spaces outside of the dense WL being substantially free of airgaps. A gate structure having a silicide layer dispose across the plurality of gates is also provided.
Huang, Yu-Fong. (2017). Airgap structure and method of manufacturing thereof (U.S. Patent No. 9536887). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9536887
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile