The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 03, 2017
Filed:
Dec. 14, 2012
Applicant:
Carl Zeiss Smt Gmbh, Oberkochen, DE;
Inventors:
Johannes Ruoff, Aalen, DE;
Daniel Kraehmer, Essingen, DE;
Assignee:
Carl Zeiss SMT GmbH, Oberkochen, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03B 27/54 (2006.01); G03F 7/20 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); G03F 1/24 (2012.01); G03F 1/22 (2012.01);
U.S. Cl.
CPC ...
G03F 7/70141 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); G03F 1/22 (2013.01); G03F 1/24 (2013.01);
Abstract
A mask () for EUV lithography includes a substrate (), a multi-layer coating () applied to the substrate () and a mask structure () which is applied to the multi-layer coating () and which has an absorber material, the mask structure () having a maximum thickness of less than 100 nm, preferably not exceeding a maximum thickness of 30 nm, particularly preferably 20 nm, in particular 10 nm. Also disclosed is an EUV lithography system having such a mask () and a method for optimizing the imaging of such a mask ().