The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 03, 2017

Filed:

Dec. 21, 2015
Applicant:

Rohm and Haas Electronic Materials Cmp Holdings, Inc., Newark, DE (US);

Inventors:

Yi Guo, Newark, DE (US);

David Mosley, Lafayette Hill, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C09G 1/02 (2006.01); B24B 37/20 (2012.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
C09G 1/02 (2013.01); B24B 37/20 (2013.01); H01L 21/31053 (2013.01);
Abstract

A process for chemical mechanical polishing of a substrate is provided, comprising: providing the substrate, wherein the substrate has an exposed silicon dioxide; providing a chemical mechanical polishing composition, consisting of, as initial components: water, a colloidal silica abrasive; optionally, a substance according to formula (I); a substance according to formula (II); and, optionally, a pH adjusting agent; wherein a pH of the chemical mechanical polishing composition is ≦6; providing a chemical mechanical polishing pad with a polishing surface; dispensing the chemical mechanical polishing composition onto the polishing surface in proximity to an interface between the chemical mechanical polishing pad and the substrate; and, creating dynamic contact at the interface between the chemical mechanical polishing pad and the substrate with a down force of 0.69 to 34.5 kPa; wherein the substrate is polished; wherein some of the exposed silicon dioxide is removed from the substrate.


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