The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Oct. 23, 2015
United Microelectronics Corp., Hsinchu, TW;
Wei-Hsin Liu, Changhua County, TW;
Fu-Yu Tsai, Tainan, TW;
Bin-Siang Tsai, Changhua County, TW;
Wei-Lun Hsu, Taichung, TW;
Shang-Yi Yang, Taichung, TW;
Pi-Hsuan Lai, Kaohsiung, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A method of fabricating a semiconductor device is provided. A plurality of sacrificial gates and a plurality of sacrificial gate dielectric layers thereunder are formed on a substrate. An interlayer dielectric layer is filled between the sacrificial gates. A protective layer is formed on the interlayer dielectric layer. The sacrificial gates and the sacrificial gate dielectric layers are removed to form an opening, wherein the interlayer dielectric layer is protected by the protective layer from recessing. A stacked gate structure is formed in the opening, wherein the protective layer is removed.