The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Oct. 02, 2013
Ellie Yieh, San Jose, CA (US);
Ludovic Godet, Boston, MA (US);
Srinivas Nemani, Sunnyvale, CA (US);
Er-xuan Ping, Fremont, CA (US);
Gary Dickerson, Gloucester, MA (US);
Ellie Yieh, San Jose, CA (US);
Ludovic Godet, Boston, MA (US);
Srinivas Nemani, Sunnyvale, CA (US);
Er-Xuan Ping, Fremont, CA (US);
Gary Dickerson, Gloucester, MA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Embodiments include methods and systems of 3D structure fill. In one embodiment, a method of filling a trench in a wafer includes performing directional plasma treatment with an ion beam at an angle with respect to a sidewall of the trench to form a treated portion of the sidewall and an untreated bottom of the trench. A material is deposited in the trench. The deposition rate of the material on the treated portion of the sidewall is different than a second deposition rate on the untreated bottom of the trench. In one embodiment, a method includes depositing a material on the wafer, filling a bottom of the trench and forming a layer on a sidewall of the trench and a top surface adjacent to the trench. The method includes etching the layer with an ion beam at an angle with respect to the sidewall.