The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Sep. 17, 2013
Tokyo Electron Limited, Tokyo, JP;
Hideki Mizuno, Boise, ID (US);
Kumiko Yamazaki, Miyagi, JP;
TOKYO ELECTRON LIMITED, Tokyo, JP;
Abstract
A plasma etching method includes a first process and a second process. In the first process, a hole is formed in a processing target film formed on a substrate accommodated within a processing chamber by performing an etching process of etching the processing target film. In the second process, a removing process, a deposition process and an extending process are repeatedly performed. In the removing process, a reaction product adhering to an inlet portion of the hole which is formed through the etching process is removed. In the deposition process, a deposit is deposited on a sidewall of the hole from which the reaction product is removed through the removing process. In the extending process, the hole, in which the deposit is deposited on the sidewall thereof through the deposition process, is deeply etched by performing the etching process.