The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Apr. 15, 2013
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Makoto Muramatsu, Koshi, JP;
Takahiro Kitano, Koshi, JP;
Tadatoshi Tomita, Koshi, JP;
Keiji Tanouchi, Nirasaki, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/26 (2006.01); H01L 21/027 (2006.01); G03F 7/40 (2006.01); G03F 7/00 (2006.01); G03F 7/16 (2006.01); B81C 1/00 (2006.01); H01L 21/67 (2006.01); H01L 21/3105 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0274 (2013.01); B81C 1/00031 (2013.01); G03F 7/0002 (2013.01); G03F 7/0035 (2013.01); G03F 7/16 (2013.01); G03F 7/168 (2013.01); G03F 7/40 (2013.01); G03F 7/405 (2013.01); H01L 21/0271 (2013.01); H01L 21/0273 (2013.01); H01L 21/31058 (2013.01); H01L 21/31133 (2013.01); H01L 21/31138 (2013.01); H01L 21/6708 (2013.01); H01L 21/6715 (2013.01); H01L 21/67051 (2013.01); H01L 21/67115 (2013.01); B81C 2201/0149 (2013.01);
Abstract
A photoresist pattern used for forming a pattern of a block copolymer is formed on a substrate, and then an acid solution is supplied and an alkaline solution is further supplied to the photoresist pattern so as to slim and smooth the photoresist pattern. A block copolymer solution is applied to the substrate on which the smoothed photoresist pattern has been formed, to form a film of the block copolymer, and the film is heated.