The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 27, 2016
Filed:
Dec. 03, 2014
Yang-kon Kim, Gyeonggi-do, KR;
Bo-mi Lee, Gyeonggi-do, KR;
Won-joon Choi, Gyeonggi-do, KR;
Guk-cheon Kim, Gyeonggi-do, KR;
Daisuke Watanabe, Tokyo, JP;
Makoto Nagamine, Tokyo, JP;
Young-min Eeh, Tokyo, JP;
Koji Ueda, Tokyo, JP;
Toshihiko Nagase, Tokyo, JP;
Kazuya Sawada, Tokyo, JP;
Yang-Kon Kim, Gyeonggi-do, KR;
Bo-Mi Lee, Gyeonggi-do, KR;
Won-Joon Choi, Gyeonggi-do, KR;
Guk-Cheon Kim, Gyeonggi-do, KR;
Daisuke Watanabe, Tokyo, JP;
Makoto Nagamine, Tokyo, JP;
Young-Min Eeh, Tokyo, JP;
Koji Ueda, Tokyo, JP;
Toshihiko Nagase, Tokyo, JP;
Kazuya Sawada, Tokyo, JP;
SK Hynix Inc., Gyeonggi-do, KR;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
An electronic device includes a semiconductor memory, and the semiconductor memory includes a first magnetic layer having a variable magnetization direction; a second magnetic layer having a pinned magnetization direction; and a tunnel barrier layer interposed between the first magnetic layer and the second magnetic layer, wherein the second magnetic layer includes a ferromagnetic material with molybdenum (Mo) added thereto.