The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Mar. 12, 2013
Naruhisa Miura, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Yuji Abe, Tokyo, JP;
Shuhei Nakata, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Yasuhiro Kagawa, Tokyo, JP;
Naruhisa Miura, Tokyo, JP;
Shiro Hino, Tokyo, JP;
Akihiko Furukawa, Tokyo, JP;
Yuji Abe, Tokyo, JP;
Shuhei Nakata, Tokyo, JP;
Masayuki Imaizumi, Tokyo, JP;
Yasuhiro Kagawa, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
A source region of a MOSFET includes: a source contact region connected to a source pad; a source extension region adjacent to a channel region in a well region; and a source resistance control region arranged between the source extension region and the source contact region. The source resistance control region is different in an impurity concentration from the source extension region and the source contact region. These three regions are connected in series between the source pad and the channel region in the well region.