The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Feb. 24, 2014
Applicant:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66484 (2013.01); H01L 21/823807 (2013.01); H01L 29/423 (2013.01); H01L 29/7391 (2013.01);
Abstract
A method includes providing a semiconductor substrate having an active region and forming an isolation structure to isolate the active region. First and second gate structures are formed over the active region. First and second doped regions are formed within the active region of the substrate, the first doped region has a first conductivity type, the second doped region has the second conductivity type. The first and second gate structures are interposed between the first and second doped regions.