The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 20, 2016

Filed:

Mar. 19, 2012
Applicants:

Rui Huang, Singapore, SG;

Heap Hoe Kuan, Singapore, SG;

Yaojian Lin, Singapore, SG;

Seng Guan Chow, Singapore, SG;

Inventors:

Rui Huang, Singapore, SG;

Heap Hoe Kuan, Singapore, SG;

Yaojian Lin, Singapore, SG;

Seng Guan Chow, Singapore, SG;

Assignee:

STATS ChipPAC Pte. Ltd., Singapore, SG;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/02 (2006.01); H01L 25/10 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01); H01L 25/065 (2006.01); H01L 25/03 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 25/105 (2013.01); H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 23/3128 (2013.01); H01L 24/19 (2013.01); H01L 24/96 (2013.01); H01L 25/03 (2013.01); H01L 25/0657 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 24/81 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/1134 (2013.01); H01L 2224/12105 (2013.01); H01L 2224/16 (2013.01); H01L 2224/16225 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73265 (2013.01); H01L 2224/81203 (2013.01); H01L 2224/81205 (2013.01); H01L 2224/81801 (2013.01); H01L 2224/92 (2013.01); H01L 2224/96 (2013.01); H01L 2225/06517 (2013.01); H01L 2225/06541 (2013.01); H01L 2225/06582 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/014 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01023 (2013.01); H01L 2924/01024 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01046 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/01322 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/04953 (2013.01); H01L 2924/09701 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/14 (2013.01); H01L 2924/1433 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/181 (2013.01); H01L 2924/19041 (2013.01); H01L 2924/19042 (2013.01); H01L 2924/19043 (2013.01); H01L 2924/30105 (2013.01);
Abstract

A semiconductor device is made by forming a conductive layer over a first sacrificial carrier. A solder bump is formed over the conductive layer. A no-flow underfill material is deposited over the first carrier, conductive layer, and solder bump. A semiconductor die or component is compressed into the no-flow underfill material to electrically contact the conductive layer. A surface of the no-flow underfill material and first solder bump is planarized. A first interconnect structure is formed over a first surface of the no-flow underfill material. The first interconnect structure is electrically connected to the solder bump. A second sacrificial carrier is mounted over the first interconnect structure. A second interconnect structure is formed over a second side of the no-flow underfill material. The second interconnect structure is electrically connected to the first solder bump. The semiconductor devices can be stacked and electrically connected through the solder bump.


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