The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 20, 2016
Filed:
Dec. 12, 2013
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method of fabricating a semiconductor integrated circuit (IC) is disclosed. A dielectric layer is deposited over a substrate and a hard mask (HM) layer is deposited over the dielectric layer. A line-like opening is formed in the HM layer and a line-end opening are then formed in the HM layer to connect to the line-like opening at the end of the line-like opening. The dielectric layer is etched through the line-like opening and the line-end opening to form a dielectric trench and a conductive line is formed in the dielectric trench.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile