The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Jul. 17, 2014
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Qi Xie, Leuven, BE;

Jan Willem Maes, Wilrijk, BE;

Tom Blomberg, Vantaa, FI;

Marko Tuominen, Helsinki, FI;

Suvi Haukka, Helsinki, FI;

Robin Roelofs, Leuven, BE;

Jacob Woodruff, Scottsdale, AZ (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01); H01L 21/02 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1616 (2013.01); H01L 21/0228 (2013.01); H01L 21/02175 (2013.01); H01L 27/249 (2013.01); H01L 45/08 (2013.01); H01L 45/085 (2013.01); H01L 45/12 (2013.01); H01L 45/1226 (2013.01); H01L 45/1266 (2013.01); H01L 45/14 (2013.01); H01L 45/146 (2013.01); H01L 45/1608 (2013.01);
Abstract

The disclosed technology generally relates to semiconductor devices, and relates more particularly to resistive random access memory devices and methods of making the same. In one aspect, a method of forming a resistive random access memory cell of a random access memory device includes forming a first electrode and forming a resistive switching material comprising an oxide of a pnictogen element by atomic layer deposition. The method additionally includes forming a metallic layer comprising the pnictogen element by atomic layer deposition (ALD). The resistive switching material is interposed between the first electrode and the metallic layer.


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