The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Jun. 16, 2015
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventors:
Rajesh N. Gupta, Alviso, CA (US);
Farid Nemati, Redwood City, CA (US);
Assignee:
Micron Technology, Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2454 (2013.01); G11C 11/161 (2013.01); H01L 27/228 (2013.01); H01L 27/2436 (2013.01); H01L 27/2463 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01); H01L 45/146 (2013.01); H01L 45/147 (2013.01); H01L 45/16 (2013.01); H01L 45/1608 (2013.01);
Abstract
Arrays of memory cells having a common gate terminal and methods of operating and forming the same are described herein. As an example, an array of memory cells may include a group of memory cells each having a resistive storage element coupled to a select device. Each select device includes a first terminal, a second terminal, and a gate terminal, where the gate terminal is common to each memory cell of the group.