The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2016
Filed:
Apr. 18, 2016
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Anthony Renau, West Newbury, MA (US);
Christopher Hatem, Seabrook, NH (US);
Varian Semiconductor Equipment Associates, Inc., Gloucester, MA (US);
Abstract
A method for fabricating a multilayer structure includes providing a mask on a device stack disposed on the substrate, the device stack comprising a first plurality of layers composed of a first layer type and a second layer type; directing first ions along a first direction forming a first non-zero angle of incidence with respect to a normal to a plane of the substrate, wherein a first sidewall is formed having a sidewall angle forming a first non-zero angle of inclination with respect to the normal, the first sidewall comprising a second plurality of layers from at least a portion of the first plurality of layers and composed of the first layer type and second layer type; and etching the second plurality of layers using a first selective etch wherein the first layer type is selectively etched with respect to the second layer type.