The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 13, 2016

Filed:

Dec. 28, 2015
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

Wanbing Yi, Singapore, SG;

Chin Chuan Neo, Singapore, SG;

Hai Cong, Singapore, SG;

Kin Wai Tang, Singapore, SG;

Weining Li, Singapore, SG;

Juan Boon Tan, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/308 (2006.01); H01L 21/027 (2006.01); G03F 1/00 (2012.01); G03F 1/36 (2012.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3088 (2013.01); H01L 21/0274 (2013.01); H01L 21/3081 (2013.01); G03F 1/00 (2013.01); G03F 1/144 (2013.01); G03F 1/36 (2013.01); H01L 21/0337 (2013.01);
Abstract

A semiconductor device and method for forming a semiconductor device are presented. The method includes providing a patterned reticle having a pattern perimeter defined by active and dummy patterns. The dummy patterns include dummy structures modified according to a density equation. The patterned reticle is used to pattern a resist layer on a substrate with a device layer. An etch is performed to pattern the device layer using the patterned resist layer. Additional processing is performed to complete formation of the device.


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