The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2016
Filed:
Jun. 03, 2015
Applicant:
Macronix International Co., Ltd., Hsinchu, TW;
Inventors:
Yu-Yu Lin, New Taipei, TW;
Feng-Min Lee, Hsinchu, TW;
Chien-Hung Lu, Hsinchu, TW;
Chin-Yi Tseng, Hsinchu, TW;
Assignee:
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 45/00 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1253 (2013.01); H01L 45/1233 (2013.01); H01L 45/1683 (2013.01);
Abstract
A memory structure including an insulating layer, a first electrode layer and a first barrier is provided. The insulating layer has a recess. The first electrode layer is formed in the recess and has a first top surface. The first barrier is formed between the insulating layer and the first electrode layer, and has a second top surface lower than the first top surface. The first top surface and the second top surface are lower than an opening of the recess.